Modeling of RF-design at board level for Assisted Global Positioning System (AGPS)
Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
This thesis describes the design of a 1575.42 MHz Low-Noise Amplifier (LNA) using a Hetero-Junction Field Effect Transistor (HJ-FET) from NEC. The LNA design focuses on a minimum noise figure and good power gain in order to improve receiver sensitivity. The first evaluation of the LNA module shows a good agreement between the simulated and measured results. However, the output matching section has some deviation from the reflection coefficient against the simulated results, which in turn led to a minor redesign of the output matching network. Touchstone parameters representing a via and a SubMiniature version A (SMA) connector were extracted from measurements using Matlab and verified in Microwave Office.
The LNA prototype has a measured gain of 15.54 dB, a noise figure of 0.80 dB. The receiver minimum detectable signal level with SAW-filter is decreased from -159.15 dBm using the Infineon BGA615L7E6327 Silicon Germanium GPS Low-Noise Amplifier to -159.40 dBm.
Place, publisher, year, edition, pages
2007. , 70 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-96340ISRN: LITH-ITN-ED-EX--07/020--SEOAI: oai:DiVA.org:liu-96340DiVA: diva2:645434
Subject / course