A 0.5-V 250-nW 65-dB SNDR Passive ΔΣ Modulator for Medical Implant Devices
2013 (English)In: Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS), Beijing, China, 19-23 May, 2013, 2013, 2010-2013 p.Conference paper (Refereed)
A 0.5-V ultra-low-power second-order DT DS modulator is presented in this paper for medical implant devices. The modulator employs 2nd-order passive low-pass filter and ultra-low-voltage building blocks, including preamplifier, regenerative comparator, and clock controller, in order to enable operation near 0.5 V supply. A low-noise and gain-enhanced single-stage preamplifier is developed using a body-driven technique. Passive filter is gain boosted by power-efficient charge-redistribution amplification scheme. Designed in a 65nm CMOS technology, the modulator achieves 65 dB peak SNDR over a 500 Hz signal bandwidth, while it consumes 250 nW from a 0.5 V supply. The modulator is functional at 0.45V and obtains 52 dB SNR, while consuming 200 nW.
Place, publisher, year, edition, pages
2013. 2010-2013 p.
, IEEE International Symposium on Circuits and Systems (ISCAS), 2013, ISSN 0271-4302 ; 2013
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:liu:diva-97263DOI: 10.1109/ISCAS.2013.6572265ISI: 000332006802059ISBN: 978-1-4673-5760-9 (print)OAI: oai:DiVA.org:liu-97263DiVA: diva2:645834
The IEEE International Symposium on Circuits and Systems (ISCAS), Beijing, China, 19-23 May, 2013