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Controlled Growth of GaN Pyramidal template hosting InGaN Quantum Dots
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0003-3203-7935
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-9140-6724
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(English)Manuscript (preprint) (Other academic)
Abstract [en]

The emission properties of InGaN grown on hexagonal GaN pyramids with various pitch distances (PD) are studied. Emissions associated with InGaN quantum wells (QWs) and InGaN quantum dots (QDs) can be identified. The emission energies of InGaN QWs and QDs shift toward opposite directions with increasing PD; red-shift for QWs and blue-shift for QDs. Based on the source supply mechanism in a selective area growth process, the formation of InGaN QDs on GaN pyramids is believed to be a combined effect of Stranski-Krastanow growth mode and spinodal decomposition taking place at the microscopic (0001) surfaces on GaN pyramids.

National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-97411OAI: oai:DiVA.org:liu-97411DiVA: diva2:647667
Available from: 2013-09-12 Created: 2013-09-12 Last updated: 2016-08-31Bibliographically approved
In thesis
1. InGaN Quantum Dots Grown on GaN Pyramid Arrays
Open this publication in new window or tab >>InGaN Quantum Dots Grown on GaN Pyramid Arrays
2013 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Selective-area growth (SAG) of InGaN on GaN pyramids, which allows the formation of additional hybrid quantum structures, including quantum wires and quantum dots (QDs) in a site-controlled fashion, is attractive for both fundamental research and device application. The site-controlled growth of QDs showing sharp emission lines is seen as the first step toward the frontier quantum information application (QIA). Note that, in such case, one QD represents one device unless the challenge of fabricating identical QDs is overcome.

The concept of SAG GaN pyramids hosting InGaN QDs has been reported since 2000. However, the observation of sharp emission lines, which can be ascribed to three-dimensional carrier confinement in QDs, seems to be occasional.

The main outcome of this work is the investigation of the InGaN QDs grown on GaN hexagonal pyramids. This work covers the formation mechanism of InGaN QDs to the emission properties of individual InGaN QDs. A modified SAG approach to obtain InGaN QDs emitting photons with heralded polarization directions is also demonstrated. The inherent high polarization degree of photons emitted by InGaN QDs together with heralded polarization direction reveals a promising potential for the direct generation of linearly-polarized photons by site-controlled InGaN QDs.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2013. 59 p.
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1534
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-97412 (URN)978-91-7519-550-6 (ISBN)
Public defence
2013-09-05, Planck, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 10:15 (English)
Opponent
Supervisors
Available from: 2013-09-12 Created: 2013-09-12 Last updated: 2013-09-16Bibliographically approved

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Hsu, Chih-WeiLundskog, AndersPalisaitis, JustinasPersson, PerKarlsson, K. FredrikHultman, LarsForsberg, UrbanHoltz, Per-OlofJanzén, Erik

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Hsu, Chih-WeiLundskog, AndersPalisaitis, JustinasPersson, PerKarlsson, K. FredrikHultman, LarsForsberg, UrbanHoltz, Per-OlofJanzén, Erik
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Semiconductor MaterialsThe Institute of TechnologyThin Film Physics
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