Controlled Growth of GaN Pyramidal template hosting InGaN Quantum Dots
(English)Manuscript (preprint) (Other academic)
The emission properties of InGaN grown on hexagonal GaN pyramids with various pitch distances (PD) are studied. Emissions associated with InGaN quantum wells (QWs) and InGaN quantum dots (QDs) can be identified. The emission energies of InGaN QWs and QDs shift toward opposite directions with increasing PD; red-shift for QWs and blue-shift for QDs. Based on the source supply mechanism in a selective area growth process, the formation of InGaN QDs on GaN pyramids is believed to be a combined effect of Stranski-Krastanow growth mode and spinodal decomposition taking place at the microscopic (0001) surfaces on GaN pyramids.
IdentifiersURN: urn:nbn:se:liu:diva-97411OAI: oai:DiVA.org:liu-97411DiVA: diva2:647667