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The Dynamics of Charged and Neutral Excitons in an InGaN Quantum Dot on a GaN Pyramid
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-4547-6673
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(English)Manuscript (preprint) (Other academic)
Abstract [en]

The neutral (X0) and negatively charged excitons (X-) in an InGaN QD on a GaN pyramid is studied by the timeintegrated micro-photoluminescence (μPL) and time-resolved micro-photoluminescence (TRμPL) microcopies. Both X0 and X- exhibit mono-exponential decay curves with fitted lifetimes of 310 and 140 ps, respectively. Neither energy shifts nor changes in the life times X0 and X- with increasing excitation power were observed, indicating the QD is small and free from the quantum confine Stark effect. The TRμPL is not only a powerful technique for studying the dynamics of exciton in QDXs, but also for the identification of exciton complexes in QDs.

National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-97416OAI: oai:DiVA.org:liu-97416DiVA: diva2:647673
Available from: 2013-09-12 Created: 2013-09-12 Last updated: 2015-01-23Bibliographically approved
In thesis
1. InGaN Quantum Dots Grown on GaN Pyramid Arrays
Open this publication in new window or tab >>InGaN Quantum Dots Grown on GaN Pyramid Arrays
2013 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Selective-area growth (SAG) of InGaN on GaN pyramids, which allows the formation of additional hybrid quantum structures, including quantum wires and quantum dots (QDs) in a site-controlled fashion, is attractive for both fundamental research and device application. The site-controlled growth of QDs showing sharp emission lines is seen as the first step toward the frontier quantum information application (QIA). Note that, in such case, one QD represents one device unless the challenge of fabricating identical QDs is overcome.

The concept of SAG GaN pyramids hosting InGaN QDs has been reported since 2000. However, the observation of sharp emission lines, which can be ascribed to three-dimensional carrier confinement in QDs, seems to be occasional.

The main outcome of this work is the investigation of the InGaN QDs grown on GaN hexagonal pyramids. This work covers the formation mechanism of InGaN QDs to the emission properties of individual InGaN QDs. A modified SAG approach to obtain InGaN QDs emitting photons with heralded polarization directions is also demonstrated. The inherent high polarization degree of photons emitted by InGaN QDs together with heralded polarization direction reveals a promising potential for the direct generation of linearly-polarized photons by site-controlled InGaN QDs.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2013. 59 p.
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1534
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-97412 (URN)978-91-7519-550-6 (ISBN)
Public defence
2013-09-05, Planck, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 10:15 (English)
Opponent
Supervisors
Available from: 2013-09-12 Created: 2013-09-12 Last updated: 2013-09-16Bibliographically approved

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Eriksson, Martin. O.Hsu, Chih-WeiLundskog, AndersKarlsson, K. FredrikBergman, PederJanzén, ErikHoltz, Per-Olof

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Semiconductor MaterialsThe Institute of TechnologyThin Film Physics
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