Direct generation of linearly-polarized photon emission with designated orientations from site-controlled InGaN quantum dots
2014 (English)In: Light: Science & Applications, ISSN 2047-7538 (online), 2095-5545 (print), Vol. 3, e139- p.Article in journal (Refereed) Published
Semiconductor quantum dots (QDs) have been demonstrated viable for the emission of single photons on demand during the past decade. However, the synthesis of QDs emitting photons with pre-defined and deterministic polarization vectors has proven arduous. The access of linearly-polarized photons is essential for various applications. In this report, a novel concept to directly generate linearly-polarized photons is presented. This concept is based on InGaN QDs grown on top of elongated GaN hexagonal pyramids, by which predefined orientations herald the polarization vectors of the emitted photons from the QDs. This growth scheme should allow fabrication of ultracompact arrays of photon emitters, with a controlled polarization direction for each individual QD emitter.
Place, publisher, year, edition, pages
Nature Publishing Group, 2014. Vol. 3, e139- p.
GaN; InGaN; photoluminescence; polarized emission; quantum dot
IdentifiersURN: urn:nbn:se:liu:diva-97417DOI: 10.1038/lsa.2014.20ISI: 000331998400011OAI: oai:DiVA.org:liu-97417DiVA: diva2:647674