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Direct generation of linearly-polarized photon emission with designated orientations from site-controlled InGaN quantum dots
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-4547-6673
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology. Department of Physics, Faculty of Science, Thaksin University, Thailand.
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2014 (English)In: Light: Science & Applications, ISSN 2095-5545, Vol. 3, e139Article in journal (Refereed) Published
Abstract [en]

Semiconductor quantum dots (QDs) have been demonstrated viable for the emission of single photons on demand during the past decade. However, the synthesis of QDs emitting photons with pre-defined and deterministic polarization vectors has proven arduous. The access of linearly-polarized photons is essential for various applications. In this report, a novel concept to directly generate linearly-polarized photons is presented. This concept is based on InGaN QDs grown on top of elongated GaN hexagonal pyramids, by which predefined orientations herald the polarization vectors of the emitted photons from the QDs. This growth scheme should allow fabrication of ultracompact arrays of photon emitters, with a controlled polarization direction for each individual QD emitter.

Place, publisher, year, edition, pages
Nature Publishing Group, 2014. Vol. 3, e139
Keyword [en]
GaN; InGaN; photoluminescence; polarized emission; quantum dot
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-97417DOI: 10.1038/lsa.2014.20ISI: 000331998400011OAI: oai:DiVA.org:liu-97417DiVA: diva2:647674
Available from: 2013-09-12 Created: 2013-09-12 Last updated: 2017-04-11Bibliographically approved
In thesis
1. InGaN Quantum Dots Grown on GaN Pyramid Arrays
Open this publication in new window or tab >>InGaN Quantum Dots Grown on GaN Pyramid Arrays
2013 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Selective-area growth (SAG) of InGaN on GaN pyramids, which allows the formation of additional hybrid quantum structures, including quantum wires and quantum dots (QDs) in a site-controlled fashion, is attractive for both fundamental research and device application. The site-controlled growth of QDs showing sharp emission lines is seen as the first step toward the frontier quantum information application (QIA). Note that, in such case, one QD represents one device unless the challenge of fabricating identical QDs is overcome.

The concept of SAG GaN pyramids hosting InGaN QDs has been reported since 2000. However, the observation of sharp emission lines, which can be ascribed to three-dimensional carrier confinement in QDs, seems to be occasional.

The main outcome of this work is the investigation of the InGaN QDs grown on GaN hexagonal pyramids. This work covers the formation mechanism of InGaN QDs to the emission properties of individual InGaN QDs. A modified SAG approach to obtain InGaN QDs emitting photons with heralded polarization directions is also demonstrated. The inherent high polarization degree of photons emitted by InGaN QDs together with heralded polarization direction reveals a promising potential for the direct generation of linearly-polarized photons by site-controlled InGaN QDs.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2013. 59 p.
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1534
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-97412 (URN)978-91-7519-550-6 (ISBN)
Public defence
2013-09-05, Planck, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 10:15 (English)
Opponent
Supervisors
Available from: 2013-09-12 Created: 2013-09-12 Last updated: 2013-09-16Bibliographically approved

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Direct generation of linearly-polarized photon emission with designated orientations from site-controlled InGaN quantum dots(242 kB)158 downloads
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Lundskog, AndersHsu, Chih-WeiKarlsson, K. FredrikAmloy, SupaluckNilsson, DanielForsberg, UrbanHoltz, Per-OlofJanzén, Erik

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Lundskog, AndersHsu, Chih-WeiKarlsson, K. FredrikAmloy, SupaluckNilsson, DanielForsberg, UrbanHoltz, Per-OlofJanzén, Erik
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Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and Biology
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