Valley spin polarization by using the extraordinary Rashba effect on silicon
2013 (English)In: Nature Communications, ISSN 2041-1723, Vol. 4, no 2073Article in journal (Refereed) Published
The addition of the valley degree of freedom to a two-dimensional spin-polarized electronic system provides the opportunity to multiply the functionality of next-generation devices. So far, however, such devices have not been realized due to the difficulty to polarize the valleys, which is an indispensable step to activate this degree of freedom. Here we show the formation of 100% spin-polarized valleys by a simple and easy way using the Rashba effect on a system with C-3 symmetry. This polarization, which is much higher than those in ordinary Rashba systems, results in the valleys acting as filters that can suppress the backscattering of spin-charge. The present system is formed on a silicon substrate, and therefore opens a new avenue towards the realization of silicon spintronic devices with high efficiency.
Place, publisher, year, edition, pages
Nature Publishing Group: Nature Communications , 2013. Vol. 4, no 2073
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-97458DOI: 10.1038/ncomms3073ISI: 000323669500002OAI: oai:DiVA.org:liu-97458DiVA: diva2:647771
Funding Agencies|G-COE programs|G-03|National Research Foundation of Korea through the Center for Low Dimensional Electronic Symmetry|2012R1A3A2026380|SRC Center for Topological Materials|2011-0030789||20244045||25287070|2013-09-122013-09-122013-09-12