Double-Gate Light-Emitting Electrochemical Transistor: Confining the Organic p-n Junction
2013 (English)In: Journal of the American Chemical Society, ISSN 0002-7863, E-ISSN 1520-5126, Vol. 135, no 33, 12224-12227 p.Article in journal (Refereed) Published
In conventional light-emitting electrochemical cells (LECs), an off-centered p-n junction is one of the major drawbacks, as it leads to exciton quenching at one of the charge-injecting electrodes and results in performance instability. To combat this problem, we have developed a new device configuration, the double-gate light-emitting electrochemical transistor (DG-LECT), in which the location of the light-emitting p-n junction can be precisely defined via the position of the two gate terminals. Based on a planar LEC structure, two gate electrodes made from an electrochemically active conducting polymer are employed to predefine the p- and n-doped area of the light-emitting polymer. Thus, a p-n junction is formed in between the p-doped and n-doped regions. We demonstrate a homogeneous and centered p-n junction as well as other predefined junction patterns in these DG-LECT devices. Additionally, we report an electrical model that explains the operation of the DG-LECTs. The DG-LECT device provides a new tool to study the fundamental physics of LECs, as it dissects the key working process of LEC into decoupled p-doping, n-doping, and electroluminescence.
Place, publisher, year, edition, pages
American Chemical Society , 2013. Vol. 135, no 33, 12224-12227 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-97661DOI: 10.1021/ja407049bISI: 000323536100019OAI: oai:DiVA.org:liu-97661DiVA: diva2:649986
Funding Agencies|Swedish Foundation for Strategic Research (OPEN)||European Regional Development Fund through Tillvaxtverket (PEA-PPP)||VINNOVA|2012-01607|Knut and Alice Wallenberg Foundation||Onnesjo Foundation||2013-09-192013-09-192015-05-06