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Effect of High NH3 Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates
Tokyo University of Agriculture and Technology, Japan.
Tokyo University of Agriculture and Technology, Japan.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-4547-6673
Tokyo University of Agriculture and Technology, Japan.
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2013 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 52, no 8Article in journal (Refereed) Published
Abstract [en]

The influence of the source gas supply sequence prior to growth and the NH3 input partial pressure (PoNH3) on the nucleation of InN islands during the initial stages of hydride vapor phase epitaxy on a nitrided (0001) sapphire substrate was investigated. The crystalline quality of the InN layer after subsequent lateral growth was also examined. When NH3 was flowed prior to growth, single-crystal hexagonal InN islands formed. When InN was grown with a higher PoNH3, the number of InN islands decreased remarkably while their diameter increased. The crystalline quality of InN grown on the hexagonal islands with a high PoNH3 significantly improved with increasing growth time. A strong PL spectrum was observed only from InN layers grown with a high PoNH3. It was thus revealed that an NH3 preflow and a high PoNH3 are effective for producing InN with high crystalline quality and good optical and electrical properties.

Place, publisher, year, edition, pages
Japan Society of Applied Physics , 2013. Vol. 52, no 8
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-98149DOI: 10.7567/JJAP.52.08JD05ISI: 000323883100055OAI: diva2:652288

Funding Agencies|Japan Society for the Promotion Science|23760006|International Training Program||Japan Society for the Promotion of Science||

Available from: 2013-09-30 Created: 2013-09-30 Last updated: 2015-01-23

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Karlsson, Fredrik K.Holtz, Per-Olof
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