Process stability and morphology optimization of very thick 4H-SiC epitaxial layers grown by chloride-based CVD
2013 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 380, 55-60 p.Article in journal (Refereed) Published
The development of a chemical vapor deposition (CVD) process for very thick silicon carbide (SiC) epitaxial layers suitable for high power devices is demonstrated by epitaxial growth of 200 nm thick, low doped 4H-SiC layers with excellent morphology at growth rates exceeding 100 nm/h. The process development was done in a hot wall CVD reactor without rotation using both SiCl4 and SiH4+HCl precursor approaches to chloride based growth chemistry. A C/Si ratio andlt;1 and an optimized in-situ etch are shown to be the key parameters to achieve 200 nm thick, low doped epitaxial layers with excellent morphology.
Place, publisher, year, edition, pages
Elsevier , 2013. Vol. 380, 55-60 p.
Crystal morphology, CVD, Chloride-based, SiC
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-98217DOI: 10.1016/j.jcrysgro.2013.05.037ISI: 000324042000011OAI: oai:DiVA.org:liu-98217DiVA: diva2:653223
Funding Agencies|Swedish Energy Agency||Swedish Research Council (VR)||Swedish Foundation for Strategic Research (SSF)||2013-10-032013-10-032015-03-11