Bias stress effect in inverters based on polyelectrolyte-gated organic field effect transistors
2013 (English)Manuscript (preprint) (Other academic)
Prolonged gate bias application causes undesirable operational instabilities in organic transistors involving threshold voltage shift and drain current degradation; an effect known as bias stress. In this paper, we report how this instability is manifested in inverter circuits based on polyelectrolytegated p-type organic field effect transistors (EGOFETs) operating at low voltage. We find that bias stress causes a significant, but recoverable, shift in inverter switching threshold voltage. Measurements with two different polyelectrolytes reveal significant differences in the stressing and recovery behaviour, which is ascribed to the distinct nature of the ion conductive groups in the polyelectrolyte. Moreover, we report a large influence of illumination on the recovery process for one of the polyelectrolytes but not for the other, which demonstrates the need to characterize bias stress behavior for each new materials combination.
Place, publisher, year, edition, pages
Bias stress, Organic Field Effect Transistor, Organic electronics, Inverter Circuits, Unipolar Inverters, Polyelectrolyte-Gated Organic Field Effect Transistor
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-98438OAI: oai:DiVA.org:liu-98438DiVA: diva2:654910