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On the excess thermal noise in short channel MOS transistors
Linköping University, Department of Electrical Engineering. Linköping University, The Institute of Technology.
Linköping University, Department of Electrical Engineering. Linköping University, The Institute of Technology.
(English)Manuscript (preprint) (Other academic)
Abstract [en]

Drain noise current was measured at an extended temperature range on NMOS transistors of various length made in a 0.18 μm process. A comparison with theoretical noise models strongly indicates the mechanism of shot noise at low currents. We therefore suggest that the excess noise observed in short channel MOS transistors are due to shot noise, with an explanation borrowed from the theory of vacuum diodes.

National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-100236OAI: oai:DiVA.org:liu-100236DiVA: diva2:661072
Available from: 2013-10-31 Created: 2013-10-31 Last updated: 2013-10-31
In thesis
1. New directions in RF LNA design
Open this publication in new window or tab >>New directions in RF LNA design
2004 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

The RF field develops fast today and to meet the increasing needs from more and more users and higher and higher data rates for mobile terminals the number of wireless standards are rapidly increasing. This has lead to an increased number of frequency spectra dedicated for wireless communication, such as the recent ones for WCDMA, Bluetooth, and WLAN. Instead of using one RF front-end for each standard as done today, the need for multiband multistandard front-end receiver architectures will be large in the near future. This is a big step towards software defined radio. This single front-end approach will lead to more flexible receivers to a lower cost for the consumers. Multiband multistandard receivers need circuitry that can adapt to several RF-bands with very varying carrier frequencies and different requirements. For cost effectiveness there should also be a minimum of external components and on-chip passives.

One of the most critical components in a multiband multistandard receiver, independent of the receiver architecture, is the low-noise amplifier (LNA). The LNA must be capable of handling several carrier frequencies within a large bandwidth. Therefore it is not possible to optimize the circuit performance for just one frequency band as can be done for a single application LNA. This makes the design task more difficult. Two different circuit topologies that are suitable for multi band multistandard LNAs are:

• Wideband LNAs that cover the frequency bands of interest

• Tunable narrowband LNAs, tunable over the frequency bands of interest

The main focus of the research has been to develop suitable circuit techniques for such LNAs in silicon technologies (CMOS and BiCMOS) in the frequency range 1-10 GHz with a minimum of passives. Both wideband LNAs and tunable narrowband LNAs based on the principle of active recursive filters have been implemented in both CMOS and BiCMOS technologies.

Place, publisher, year, edition, pages
Linköping: Linköpings universitet, 2004. 36 p.
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1101
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-22629 (URN)1911 (Local ID)91-7373-984-7 (ISBN)1911 (Archive number)1911 (OAI)
Presentation
2004-06-15, Glashuset, Linköpings universitet, Linköping, 13:15 (Swedish)
Opponent
Available from: 2009-10-07 Created: 2009-10-07 Last updated: 2014-05-27

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Svensson, Christer

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