On the excess thermal noise in short channel MOS transistors
(English)Manuscript (preprint) (Other academic)
Drain noise current was measured at an extended temperature range on NMOS transistors of various length made in a 0.18 μm process. A comparison with theoretical noise models strongly indicates the mechanism of shot noise at low currents. We therefore suggest that the excess noise observed in short channel MOS transistors are due to shot noise, with an explanation borrowed from the theory of vacuum diodes.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-100236OAI: oai:DiVA.org:liu-100236DiVA: diva2:661072