Atom probe tomography study of Mg doped GaN layers
2014 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 25, no 27, 275701- p.Article in journal (Refereed) Published
Atom probe tomography studies on highly Mg-doped GaN(0001) layers with concentrations 5×1019 cm-3 and 1×1020 cm-3 were performed. Mg cluster formation was observed only in the higher doped sample whereas in the lower doped sample the Mg distribution was homogeneous. CL measurements showed that the emission normally attributed to stacking faults was only present in the lower doped layers ([Mg] = 1.5×1019 and 5×1019 cm-3), but absent in the higher-doped layer, where Mg clusters were detected. Mg clusters are proposed to produce a screening effect thereby destroying the exciton binding on the SFs thus rendering them optically inactive.
Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2014. Vol. 25, no 27, 275701- p.
Mg-doped GaN, stacking faults, Mg clusters, atomic probe tomography, cathodoluminescence
IdentifiersURN: urn:nbn:se:liu:diva-100752DOI: 10.1088/0957-4484/25/27/275701ISI: 000338715800013OAI: oai:DiVA.org:liu-100752DiVA: diva2:663425