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Detailed studies of graphene grown on C-face SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
MAX-lab, Lund University, S-22100 Lund, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2012 (English)In: Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, 2012, 200-202 p.Conference paper, Published paper (Refereed)
Abstract [en]

Graphene samples were grown on the C-face of SiC, at high temperature in a furnace and an Ar ambient, and were investigated using LEEM, XPEEM, LEED, XPS and ARPES. Formation of fairly large grains (crystallographic domains) of graphene exhibiting sharp (1x1) patterns in μ-LEED was revealed and that different grains showed different azimuthal orientations. Selective area constant initial energy photoelectron angular distribution patterns recorded showed the same results, ordered grains and no rotational disorder between adjacent layers. A grain size of up to a few μm was obtained on some samples.

Place, publisher, year, edition, pages
2012. 200-202 p.
Keyword [en]
μ-LEED and ARPES; C-face SiC; Graphene; LEEM; Ordered grains; XPEEM
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-101139OAI: oai:DiVA.org:liu-101139DiVA: diva2:665565
Conference
Conference and Expo, NSTI-Nanotech
Available from: 2013-11-20 Created: 2013-11-19 Last updated: 2013-11-20

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I Johansson, LeifWatcharinyanon, SomsakulIakimov, TihomirYakimova, RositsaVirojanadara, Chariya

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I Johansson, LeifWatcharinyanon, SomsakulIakimov, TihomirYakimova, RositsaVirojanadara, Chariya
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Semiconductor MaterialsThe Institute of Technology
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