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Kinks in the σ Band of Graphene Induced by Electron-Phonon Coupling
Norwegian University of Science and Technology NTNU, Norway .
Norwegian University of Science and Technology NTNU, Norway .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Aarhus University, Denmark .
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2013 (English)In: Physical Review Letters, ISSN 0031-9007, Vol. 111, no 21, 216806- p.Article in journal (Refereed) Published
Abstract [en]

Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the σ band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cutoff in the Fermi-Dirac distribution. They are therefore not expected for the σ band of graphene that has a binding energy of more than ≈3.5  eV. We argue that the observed kinks are indeed caused by the electron-phonon interaction, but the role of the Fermi-Dirac distribution cutoff is assumed by a cutoff in the density of σ states. The existence of the effect suggests a very weak coupling of holes in the σ band not only to the π electrons of graphene but also to the substrate electronic states. This is confirmed by the presence of such kinks for graphene on several different substrates that all show a strong coupling constant of λ≈1.

Place, publisher, year, edition, pages
American Physical Society , 2013. Vol. 111, no 21, 216806- p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-102495DOI: 10.1103/PhysRevLett.111.216806ISI: 000327246200003OAI: diva2:679188

Funding Agencies|Lundbeck Foundation||VILLUM Foundation||Danish Council for Independent Research/Technology and Production Sciences||Swedish Research Council||Knut and Alice Wallenberg Foundations||

Available from: 2013-12-13 Created: 2013-12-12 Last updated: 2013-12-28

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Yakimova, Rositsa
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