Study of transport properties of copper/zinc-oxide-nanorods-based Schottky diode fabricated on textile fabric
2013 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 28, no 12, 125006- p.Article in journal (Refereed) Published
In this work, a copper/zinc-oxide (ZnO)-nanorods-based Schottky diode was fabricated on the textile fabric substrate. ZnO nanorods were grown on a silver-coated textile fabric substrate by using the hydrothermal route. Scanning electron microscopy and x-ray diffraction techniques were used for the structural study. The electrical characterization of copper/ZnO-nanorods-based Schottky diodes was investigated by using a semiconductor parameter analyzer and an impedance spectrometer. The current density-voltage (J-V) and capacitance-voltage (C-V) measurements were used to estimate the electrical parameters. The threshold voltage (V-th), ideality factor (eta), barrier height (phi(b)), reverse saturation current density (J(s)), carrier concentration (N-D) and built-in potential (V-bi) were determined by using experimental data and (simulated) curve fitting. This study describes the possible fabrication of electronic and optoelectronic devices on textile fabric substrate with an acceptable performance.
Place, publisher, year, edition, pages
Institute of Physics: Hybrid Open Access , 2013. Vol. 28, no 12, 125006- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-102717DOI: 10.1088/0268-1242/28/12/125006ISI: 000327467300012OAI: oai:DiVA.org:liu-102717DiVA: diva2:681168