liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy
Academic Sinica, Taiwan .
Ritsumeikan University, Japan .
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0003-3203-7935
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-9140-6724
Show others and affiliations
2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 103, no 20, 203108- p.Article in journal (Refereed) Published
Abstract [en]

Nucleation mechanism of catalyst-free GaN nanorod grown on Si(111) is investigated by the fabrication of uniform and narrow (andlt; 35 nm) nanorods without a pre-defined mask by molecular beam epitaxy. Direct evidences show that the nucleation of GaN nanorods stems from the sidewall of the underlying islands down to the Si(111) substrate, different from commonly reported ones on top of the island directly. Accordingly, the growth and density control of the nanorods is exploited by a "narrow-pass" approach that only narrow nanorod can be grown. The optimal size of surrounding non-nucleation area around single nanorod is estimated as 88 nm.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2013. Vol. 103, no 20, 203108- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-102782DOI: 10.1063/1.4830044ISI: 000327818700083OAI: oai:DiVA.org:liu-102782DiVA: diva2:683881
Note

Funding Agencies|Academia Sinica and National Science Council in Taiwan||Swedish Foundation for Strategic Research (SSF) in Sweden, KA Wallenberg||MEXT through Grant-in-Aids for Scientific Research (A) in Japan|21246004|

Available from: 2014-01-07 Created: 2013-12-26 Last updated: 2017-12-06

Open Access in DiVA

fulltext(1225 kB)301 downloads
File information
File name FULLTEXT01.pdfFile size 1225 kBChecksum SHA-512
4edf9e8b83e63a8399582405c3bc8b564791ceb3d6f735e8899e597a62621973e4dc77051b56d779bd1db41fb9e03faba5c7709a720fa3b5a455149fd52d6225
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records BETA

Palisaitis, JustinasPersson, Per O AHoltz, Per-OlofBirch, Jens

Search in DiVA

By author/editor
Palisaitis, JustinasPersson, Per O AHoltz, Per-OlofBirch, Jens
By organisation
Thin Film PhysicsThe Institute of TechnologySemiconductor Materials
In the same journal
Applied Physics Letters
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
Total: 301 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 231 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf