Recent trends in Silicon Carbide (SiC) and Graphene based gas sensors
2013 (English)In: Semiconductor Gas Sensors / [ed] R. Jaaniso and O. K. Tan, Woodhead Publishing Limited, 2013, 117-158 p.Chapter in book (Refereed)
The introduction of silicon carbide (SiC) as the semiconductorin gas sensitive field effect devices has tremendously improved this sensor platform extending the temperature range and number of detectable gases. Here we review the recent trends in research, starting with transducer mechanisms, latest findings regarding the detection mechanism, and present new material combinations as sensing layers and smart operation of the field effect sensors enabling one sensor to act as a sensor array. Introducing epitaxially-grown graphene on SiC as gas sensing layer shows the potential of ppb detection of NO2 .
Place, publisher, year, edition, pages
Woodhead Publishing Limited, 2013. 117-158 p.
, Woodhead Publishing Series in Electronic and Optical Materials, ISSN 2050-1501 (print), 2050-151X (online) ; 38
Field effect gas sensors, SiC gas sensors, smart sensing, temperature cycling, epitaxialgraphene on SiC gas sensors
Other Engineering and Technologies not elsewhere specified
IdentifiersURN: urn:nbn:se:liu:diva-102960DOI: 10.1533/9780857098665ISBN: 978-0-85709-236-6ISBN: 978-0-85709-866-5OAI: oai:DiVA.org:liu-102960DiVA: diva2:685145