Identification of ammonia and carbon monoxide based on the hysteresis of a gas sensitive silicon carbide field effect transistor
2013 (English)In: Transducers 2013 & Eurosensors XXVII, IEEE , 2013, 250-253 p.Conference paper (Refereed)
In this work gate bias cycled operation (GBCO) is used on a gas-sensitive SiC field effect transistor(“GasFET”) to increase the sensitivity and selectivity. Gate bias ramps introduce strong hysteresis in the sensor signal. The shape of this hysteresis is shown to be an appropriate feature both for the discrimination of various gases (NH3, CO, NO, CH4) and also different gas concentrations (250 and 500 ppm). The shape is very sensitive to ambient conditions. Thus, the influence of oxygen concentration and relative humidity as well as sensor temperature is investigated and reasons for the observed signal changes are discussed.
Place, publisher, year, edition, pages
IEEE , 2013. 250-253 p.
gas sensor, field effect transistor, GasFET, hysteresis, ammonia, carbon monoxide, sensitivity, selectivity
Engineering and Technology Other Engineering and Technologies not elsewhere specified
IdentifiersURN: urn:nbn:se:liu:diva-102961DOI: 10.1109/Transducers.2013.6626749ISBN: 978-1-4673-5983-2OAI: oai:DiVA.org:liu-102961DiVA: diva2:685148
17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 16-20 June 2013, Barcelona, Spain