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Electrical Characterization of PiN Diodes with p(+) layer Selectively Grown by VLS Transport
Université de Lyon, Villeurbanne Cedex, France.
Université de Lyon, Villeurbanne Cedex, France.
Université de Lyon, Villeurbanne Cedex, France.
Université de Lyon, Villeurbanne Cedex, France.
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2013 (English)In: Silicon Carbide and Related Materials 2012 / [ed] Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein, Trans Tech Publications Inc., 2013, Vol. 740-742, 911-914 p.Conference paper, Published paper (Refereed)
Abstract [en]

This paper deals with electrical characterization of PiN diodes fabricated on an 8 degrees off-axis 4H-SiC with a p(++) epitaxial area grown by Vapour-Liquid-Solid (VLS) transport. It provides for the first time evidence that a high quality p-n junction can be achieved by using this technique followed by a High Temperature Annealing (HTA) process.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. Vol. 740-742, 911-914 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 740-742
Keyword [en]
PiN diodes; VLS; Localized Epitaxy; Electrical Characterization
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-103063DOI: 10.4028/www.scientific.net/MSF.740-742.911OAI: oai:DiVA.org:liu-103063DiVA: diva2:686629
Conference
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), St Petersburg, Russia, September 2-6, 2012
Available from: 2014-01-13 Created: 2014-01-13 Last updated: 2014-10-08Bibliographically approved

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ul-Hassan, JawadHenry, AnneJanzen, Erik

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