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High power pulsed plasma enhanced chemical vapor deposition: a brief overview of general concepts and early results
Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-7171-5383
2013 (English)In: NINETEENTH EUROPEAN CONFERENCE ON CHEMICAL VAPOR DEPOSITION (EUROCVD 19), 2013, Vol. 46, 3-11 p.Conference paper (Refereed)
Abstract [en]

The general concepts of the emerging plasma enhanced chemical vapor deposition (PECVD) technique High Power Pulsed PECVD (HiPP-PECVD) are outlined; the main feature of HiPP-PECVD is the use of a power scheme characterized by high power pulses with a duty cycle of a few percent or less to generate a process plasma with a significantly higher plasma density compared to traditional PECVD. The higher plasma density leads to a more reactive plasma chemistry, which results in a higher rate of dissociation of the precursor molecules, i.e. a more efficient use of the source material. The high plasma density also leads to a higher degree of ionization of the growth species, enabling the possibility to guide the growth species to the substrate or applying an energetic bombardment of the growing film by applying a substrate bias. Early results on HiPP-PECVD have shown that HiPP-PECVD enables deposition of phase pure alpha-Al2O3 at substrate temperatures as low as 560 degrees C with mechanical properties comparable to standard thermal CVD grown material. Also, deposition of amorphous, copper containing carbon films at deposition rates higher than 30 mu m/h has been demonstrated together with results showing the more efficient plasma chemistry. It is suggested that HiPPPECVD is a promising tool for low temperature deposition of films with tailored properties for e.g. the hard coatings industry. (C) 2013 The Authors. Published by Elsevier B.V.

Place, publisher, year, edition, pages
2013. Vol. 46, 3-11 p.
, Physics Procedia
Keyword [en]
PECVD; Pulsed plasma discharges; Substrate bias; Al2O3; Amorphous Carbon; HiPIMS
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-103064DOI: 10.1016/j.phpro.2013.07.039OAI: diva2:686633
19th European Conference on Chemical Vapor Deposition (EuroCVD), Varna, BULGARIA, SEP 01-06, 2013
Available from: 2014-01-13 Created: 2014-01-13 Last updated: 2014-01-13

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Lundin, DanielPedersen, Henrik
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