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Impact of substrate steps and of monolayer-bilayer junctions on the electronic transport in epitaxial graphene on 4H-SiC (0001)
CNR-IMM, Catania, Italy.
CNR-IMM, Catania, Italy.
CNR-IMM, Catania, Italy.
CNR-IMM, Catania, Italy.
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2013 (English)In: Silicon Carbide and Related Materials 2012 / [ed] Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein, Trans Tech Publications Inc., 2013, Vol. 740-742, 113-116 p.Conference paper (Refereed)
Abstract [en]

Two dimensional maps of the electronic conductance in epitaxial graphene (EG) grown on SiC were obtained by conductive atomic force microscopy (CAFM). The correlation between morphological and electrical maps revealed the local conductance degradation in EG over the SiC substrate steps or at the junction between monolayer (1L) and bilayer (2L) graphene regions. The effect of steps strongly depends on the charge transfer phenomena between the step sidewall and graphene, whereas the resistance increase at 1L/2L junction is a purely quantum mechanical effect, due to the weak coupling between 1L and 2L electron wavefunctions.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. Vol. 740-742, 113-116 p.
, Materials Science Forum, ISSN 0255-5476 ; 740-742
Keyword [en]
graphene; SiC; electronic transport
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-103065DOI: 10.4028/ 000319785500027OAI: diva2:686634
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), St Petersburg, Russia, September 2-6, 2012
Available from: 2014-01-13 Created: 2014-01-13 Last updated: 2014-01-28Bibliographically approved

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