Express Optical Analysis of Epitaxial Graphene on SiC: Impact of Morphology on Quantum Transport
2013 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 13, no 9, 4217-4223 p.Article in journal (Refereed) Published
We show that inspection with an optical microscope allows surprisingly simple and accurate identification of single and multilayer graphene domains in epitaxial graphene on silicon carbide (SiC/G) and is informative about nanoscopic details of the SiC topography, making it ideal for rapid and noninvasive quality control of as-grown SiC/G. As an illustration of the power of the method, we apply it to demonstrate the correlations between graphene morphology and its electronic properties by quantum magneto-transport.
Place, publisher, year, edition, pages
American Chemical Society (ACS), 2013. Vol. 13, no 9, 4217-4223 p.
Epitaxial graphene; optical microscopy; electron transport; graphene characterization; graphene morphology; graphene topography
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-103068DOI: 10.1021/nl402347gISI: 000330158900040OAI: oai:DiVA.org:liu-103068DiVA: diva2:686640