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Express Optical Analysis of Epitaxial Graphene on SiC: Impact of Morphology on Quantum Transport
Chalmers University of Technology, Göteborg, Sweden.
Chalmers University of Technology, Göteborg, Sweden.
Chalmers University of Technology, Göteborg, Sweden.
Chalmers University of Technology, Göteborg, Sweden.
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2013 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 13, no 9, 4217-4223 p.Article in journal (Refereed) Published
Abstract [en]

We show that inspection with an optical microscope allows surprisingly simple and accurate identification of single and multilayer graphene domains in epitaxial graphene on silicon carbide (SiC/G) and is informative about nanoscopic details of the SiC topography, making it ideal for rapid and noninvasive quality control of as-grown SiC/G. As an illustration of the power of the method, we apply it to demonstrate the correlations between graphene morphology and its electronic properties by quantum magneto-transport.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2013. Vol. 13, no 9, 4217-4223 p.
Keyword [en]
Epitaxial graphene; optical microscopy; electron transport; graphene characterization; graphene morphology; graphene topography
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-103068DOI: 10.1021/nl402347gISI: 000330158900040OAI: oai:DiVA.org:liu-103068DiVA: diva2:686640
Available from: 2014-01-13 Created: 2014-01-13 Last updated: 2017-12-06Bibliographically approved

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Yakimova, Rositza

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