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Reststrahl band-assisted photocurrents in epitaxial graphene layers
University of Regensburg, Germany .
University of Regensburg, Germany .
Russian Academic Science, Russia .
University of Regensburg, Germany .
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2013 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 88, no 24, 245425- p.Article in journal (Refereed) Published
Abstract [en]

We report on the observation of the reststrahl band-assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the materials surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in two-dimensional crystals and other atomic scale structures can be giantly enhanced by their deposition on a substrate with negative dielectric constant.

Place, publisher, year, edition, pages
American Physical Society , 2013. Vol. 88, no 24, 245425- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-103289DOI: 10.1103/PhysRevB.88.245425ISI: 000328686200004OAI: oai:DiVA.org:liu-103289DiVA: diva2:688497
Available from: 2014-01-17 Created: 2014-01-16 Last updated: 2017-12-06

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Yakimova, Rositsa

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CiteExportLink to record
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Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
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