The determination of valence band offset and the current transport properties of the p-NiO/n-ZnO heterojunction
2013 (English)Manuscript (preprint) (Other academic)
The electron transport in the electronic devices has significant influence on the device performance, thus current transport properties determination is highly demanded for a particular device. Herein, we report the facile hydrothermal growth method based fabrication of p-NiO/n-ZnO heterojunction. The material characterization was performed by scanning electron microscopy, X-ray diffraction, transmission electron microscopy and X-ray photo electron spectroscopy. These techniques provided the good crystal quality, pure phase of p-NiO and n-ZnO nanostructures respectively. The measured valance band offset of composite nanostructure is 2.25 eV and conduction band offset was found to be 2.58 eV. The current transport properties of the fabricated p-n junction are governed by three different I-V regions. The impedance spectroscopy was used for the determination of the role of grain boundaries at the interface.
Place, publisher, year, edition, pages
Zinc oxide, nickel oxide, heterojunction, diode, current transport properties
IdentifiersURN: urn:nbn:se:liu:diva-103340OAI: oai:DiVA.org:liu-103340DiVA: diva2:688545