A luminescence study of doping effects in InP-based radial nanowire structures
2013 (English)In: Journal of Physics, Conference Series, ISSN 1742-6588, E-ISSN 1742-6596, Vol. 471, no 1, 012040Article in journal (Refereed) Published
We have used micro-photo- and cathodo-luminescence at low temperatures to study the effects of sulphur doping in InP and radial InP/InAs/InP structured nanowires. Samples with pure wurtzite crystal structure, with modulated wurtzite/zincblende crystal structure and with different radial InAs growth times were investigated. We observed a doping concentration gradient along the nanowires, the location of segments of different crystal structure and thickness fluctuations on the monolayer scale of the InAs layer.
Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2013. Vol. 471, no 1, 012040
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-103819DOI: 10.1088/1742-6596/471/1/012040ISI: 000327967600040OAI: oai:DiVA.org:liu-103819DiVA: diva2:691734
18th Microscopy of Semiconducting Materials Conference (MSM XVIII), Oxford, UK, April 7-11, 2013