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Characterization of ZnO and ZnO: Al thin films deposited by the sol–gel dip-coating technique
Universidad de la República, Montevideo, Uruguay.
REPSOL-YPF, CITEFA, CINSO, Buenos Aires, Argentina.
Carnegie Mellon University, Pittsburgh, PA, USA.ORCID iD: 0000-0003-3277-1945
CINSO, CONICET-CITEFA, Buenos Aires, Argentina.
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2008 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 517, no 3, 1077-1080 p.Article in journal (Refereed) Published
Abstract [en]

Nanocrystalline zinc oxide films have been obtained by the sol–gel process. The films were deposited from precursor solutions by dip-coating on quartz substrates, and subsequently transformed into nanocrystalline pure or aluminium-doped ZnO films after a thermal treatment. The film microstructure and composition characterization was studied by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The optical properties were studied by transmittance spectroscopy. The water adsorption energy was measured by temperature programmed desorption (TPD) in the range 90–700 K. The optical transmittance in the UV region gives bandgap energy values of 3.27 eV for undoped samples, and higher than 3.30 eV for the Al-doped ones. The increase in bandgap energy in Al-doped samples may be explained by band-filling effects. The band edge absorption coefficient increases monotonically for the Al-doped samples but has a shoulder for the undoped ones, which may be assigned to room-temperature excitonic absorption.

Place, publisher, year, edition, pages
Elsevier, 2008. Vol. 517, no 3, 1077-1080 p.
Keyword [en]
Zinc oxide; Optical properties; Doping; Thin films; Sol–gel; Temperature programmed desorption
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-103889DOI: 10.1016/j.tsf.2008.06.028OAI: diva2:692292
Available from: 2014-01-30 Created: 2014-01-30 Last updated: 2014-02-12Bibliographically approved

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Broitman, Esteban
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ReferencesLink to record
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