Using N2 as precursor gas in III-nitride CVD growth
2003 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 253, no 1-4, 26-37 p.Article in journal (Refereed) Published
Computational fluid dynamics simulations have been performed to explore the possibility of using nitrogen gas as a precursor to III-nitride growth. A chemical model for the gas-phase decomposition of N2 has been used to show that large enough amounts of reactive species can be formed under conditions not far from those used in normal metalorganic chemical vapor deposition. Simulations were performed in 2D for various concentrations of N2, and comparisons with the use of NH3 were made. A modified reactor design needed to achieve high enough concentrations of reactive species is suggested. The possibility to increase the growth rate and material quality in III-nitride growth is discussed.
Place, publisher, year, edition, pages
Elsevier, 2003. Vol. 253, no 1-4, 26-37 p.
A1. Computer simulation; A1. Growth models; A3. Hot wall epitaxy; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III–V materials
IdentifiersURN: urn:nbn:se:liu:diva-104589DOI: 10.1016/S0022-0248(03)00971-0OAI: oai:DiVA.org:liu-104589DiVA: diva2:697778