liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Half‐Gate Light‐Emitting Electrochemical Transistor to Achieve Centered Emissive Organic p‐n Junction
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5365-6140
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5154-0291
2015 (English)In: Organic electronics, ISSN 1566-1199, E-ISSN 1878-5530, Vol. 18, p. 32-36Article in journal (Refereed) Published
Abstract [en]

Conventional organic light-emitting electrochemical cells show promise for lighting applications but in many cases suffer from unbalanced electrochemical doping. A predominant p-doping over n-doping causes an off-centered emissive p-n junction, which leads to poor power-conversion efficiency. Here, we report a half-gate lightemitting electrochemical transistor (HGLECT), in which a ion-conductive gate made from poly(3,4-ethylenedioxythiophene)-poly-(styrenesulfonate) is employed to combat this problem. The gate material, covering half the channel, is used to enhance the ndoping in this part by employing an appropriate operation protocol. We demonstrate a centered light emission zone, closely following the geometry of the gate material. The HGLECT with centered emission profile is shown to be more efficient than the corresponding LEC without gate electrode, and its n-doping level is measured to be 15%.

Place, publisher, year, edition, pages
Elsevier, 2015. Vol. 18, p. 32-36
Keywords [en]
Light-emitting electrochemical transistor; Light-emitting electrochemical cell; PEDOT:PSS; MEH-PPV; Polymer electrolyte
National Category
Physical Sciences Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-104924DOI: 10.1016/j.orgel.2014.12.027ISI: 000349548400005OAI: oai:DiVA.org:liu-104924DiVA, id: diva2:700121
Note

On the day of the defence date the status of this article was Manuscript.

Available from: 2014-03-03 Created: 2014-03-03 Last updated: 2019-12-04Bibliographically approved
In thesis
1. Light-Emitting Electrochemical Transistors
Open this publication in new window or tab >>Light-Emitting Electrochemical Transistors
2014 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Since the discovery of conductive polymers in 1977, the implementation of organic conjugated materials in electronic applications has been of great interest in both industry and academia. The goal of organic electronics is to realize large-area, inexpensive and mechanically-flexible electronic applications.

Organic light emitting diodes (OLEDs), as the first commercial product made from organic conjugated polymers, have successfully demonstrated that organic electronics can make possible a new generation of modern electronics. However, OLEDs are highly sensitive to materials selection and requires a complicated fabrication process. As a result, OLEDs are expensive to fabricate and are not suitable for low-cost printing or roll-to-roll process.

This thesis studies an alternative to OLEDs: light-emitting electrochemical cells (LECs). The active materials in an LEC consist of a conjugated light-emitting polymer (LEP) and an electrolyte. Taking advantage of electrochemical doping of the LEP, an LEC features an in-situ formed emissive organic p-n junction which is easy to fabricate. We aim to control the electrochemical doping profile by employing a “gate” terminal on top of a conventional LEC, forming a lightemitting electrochemical transistor (LECT). We developed three generations of LECTs, in which the position of the light-emitting profile can be modified by the voltage applied at the gate electrode, as well as the geometry of the gate materials. Thus, one can use this structure to achieve a centered light-emitting zone to maximize the power-conversion efficiency. Alternatively, LECTs can be used for information display in a highly integrated system, as it combines the simultaneous modulation of photons and electrons.

In addition, we use multiple LECs to construct reconfigurable circuits, based on the reversible electrochemical doping. We demonstrate an LEC-array where several different circuits can be created by forming diodes with different polarity at different locations. The thereby formed circuitry can be erased and turned into circuitry with other functionality. For example, the diodes of a digital AND gate can be re-programmed to form an analogue voltage limiter. These reprogrammable circuits are promising for fully-printed and large-area reconfigurable circuits with facile fabrication.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2014. p. 57
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1582
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-104925 (URN)10.3384/diss.diva-104925 (DOI)978-91-7519-382-3 (ISBN)
Public defence
2014-03-21, K2, Kåkenhus, Campus Norrköping, Linköpings universitet, Norrköping, 10:15 (English)
Opponent
Supervisors
Available from: 2014-03-03 Created: 2014-03-03 Last updated: 2019-11-19Bibliographically approved

Open Access in DiVA

fulltext(2018 kB)454 downloads
File information
File name FULLTEXT01.pdfFile size 2018 kBChecksum SHA-512
17ea1167b93f1aa3848586dbcd61974c63d55e08008a235fd8a09c3a9611ad5dcce42a7f1392c39f632a9034f27dbc3a989035b8aa658b360ea7273d25ba0a0d
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records

Liu, JiangEngquist, IsakBerggren, Magnus

Search in DiVA

By author/editor
Liu, JiangEngquist, IsakBerggren, Magnus
By organisation
Physics and ElectronicsThe Institute of Technology
In the same journal
Organic electronics
Physical SciencesElectrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar
Total: 454 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 948 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf