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The Synthesis of NiO/TiO2 Heterostructures and Their Valence Band Offset Determination
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, The Institute of Technology.
King Saud University, Riyadh, Saudi Arabia .
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2014 (English)In: Journal of Nanomaterials, ISSN 1687-4110, E-ISSN 1687-4129, no 928658Article in journal (Refereed) Published
Abstract [en]

In this work, a heterojunction based on p-type NiO/n-type TiO2 nanostructures has been prepared on the fluorine doped tin oxide (FTO) glass substrate by hydrothermal method. Scanning electron microscopy (SEM) and X-Ray diffraction techniques were used for the morphological and crystalline arrays characterization. The X-ray photoelectron spectroscopy was employed to determine the valence-band offset (VBO) of the NiO/TiO2 heterojunction prepared on FTO glass substrate. The core levels of Ni 2p and Ti 2p were utilized to align the valence-band offset of p-type NiO/n-type TiO2 heterojunction. The valence band offset was found to be similar to 0.41 eV and the conduction band was calculated about similar to 0.91 eV. The ratio of conduction band offset and the valence-band offset was found to be 2.21.

Place, publisher, year, edition, pages
Hindawi Publishing Corporation, 2014. no 928658
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-105428DOI: 10.1155/2014/928658ISI: 000331755500001OAI: oai:DiVA.org:liu-105428DiVA: diva2:706628
Available from: 2014-03-21 Created: 2014-03-21 Last updated: 2017-12-05

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Ibupoto, Zafar HussainAbbasi, Mazhar AliLiu, XianjieWillander, Magnus

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