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Epitaxial growth of gamma-Al2O3 on Ti2AlC(0001) by reactive high-power impulse magnetron sputtering
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0003-1785-0864
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2837-3656
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
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2014 (English)In: AIP Advances, ISSN 2158-3226, E-ISSN 2158-3226, Vol. 4, no 1, 017138- p.Article in journal (Refereed) Published
Abstract [en]

Al2O3 was deposited by reactive high-power impulse magnetron sputtering at 600 degrees C onto pre-deposited Ti2AlC(0001) thin films on alpha-Al2O3(0001) substrates. The Al2O3 was deposited to a thickness of 65 nm and formed an adherent layer of epitaxial gamma-Al2O3(111) as shown by transmission electron microscopy. The demonstration of epitaxial growth of gamma-Al2O3 on Ti2AlC (0001) open prospects for growth of crystalline alumina as protective coatings on Ti2AlC and related nanolaminated materials. The crystallographic orientation relationships are gamma-Al2O3(111)//Ti2AlC(0001) (out-of-plane) and gamma-Al2O3(2 (2) over bar0)//Ti2AlC(11 (2) over bar0) (in-plane) as determined by electron diffraction. Annealing in vacuum at 900 degrees C resulted in partial decomposition of the Ti2AlC by depletion of Al and diffusion into and through the gamma-Al2O3 layer.

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American Institute of Physics (AIP) , 2014. Vol. 4, no 1, 017138- p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-105419DOI: 10.1063/1.4863560ISI: 000331209400038OAI: oai:DiVA.org:liu-105419DiVA: diva2:706646
Available from: 2014-03-21 Created: 2014-03-21 Last updated: 2017-12-05

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Eklund, PerFrodelius, JennyHultman, LarsLu, JunMagnfält, Daniel

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