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Identification of an isolated arsenic antisite defect in GaAsBi
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Tampere University of Technology, Finland .
Tampere University of Technology, Finland .
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
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2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 104, no 5, 052110- p.Article in journal (Refereed) Published
Abstract [en]

Optically detected magnetic resonance and photoluminescence spectroscopy are employed to study grown-in defects in GaAs0.985Bi0.015 epilayers grown by molecular beam epitaxy. The dominant paramagnetic defect is identified as an isolated arsenic antisite, As-Ga, with an electron g-factor of 2.03 +/- 0.01 and an isotropic hyperfine interaction constant A (900 +/- 620) x 10(-4) cm(-1). The defect is found to be preferably incorporated during the growth at the lowest growth temperature of 270 degrees C, but its formation can be suppressed upon increasing growth temperature to 315 degrees C. The As-Ga concentration is also reduced after post-growth rapid thermal annealing at 600 degrees C.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2014. Vol. 104, no 5, 052110- p.
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-105583DOI: 10.1063/1.4864644ISI: 000331644100064OAI: oai:DiVA.org:liu-105583DiVA: diva2:708726
Available from: 2014-03-28 Created: 2014-03-27 Last updated: 2017-12-05

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Dagnelund, DanielChen, WeiminBuyanova, Irina

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