liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC
Institute of Applied Research, Vilnius University, Lithuania .
Institute of Applied Research, Vilnius University, Lithuania .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Show others and affiliations
2014 (English)In: IOP Conference Series: Materials Science and Engineering, ISSN 1757-8981, E-ISSN 1757-899X, Vol. 56, no 1, 012004- p.Article in journal (Refereed) Published
Abstract [en]

The thick N-B co-doped epilayers were grown by the fast sublimation growth method and the depth-resolved carrier lifetimes have been investigated by means of the free-carrier absorption (FCA) decay under perpendicular probe-pump measurement geometry. In some samples, we optically reveal in-grown carbon inclusions and polycrystalline defects of substantial concentration and show that these defects slow down excess carrier lifetime and prevent donor-acceptor pair photo luminescence (DAP PL). A pronounced electron lifetime reduction when injection level approaches the doping level was observed. It is caused by diffusion driven non-radiative recombination. However, the influence of surface recombination is small and insignificant at 300 K.

Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2014. Vol. 56, no 1, 012004- p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-105860DOI: 10.1088/1757-899X/56/1/012004OAI: oai:DiVA.org:liu-105860DiVA: diva2:711559
Conference
EMRS 2013 Spring Meeting, Symposium G
Available from: 2014-04-10 Created: 2014-04-10 Last updated: 2017-12-05Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Jokubavicius, ValdasSun, JianwuSyväjärvi, Mikael

Search in DiVA

By author/editor
Jokubavicius, ValdasSun, JianwuSyväjärvi, Mikael
By organisation
Semiconductor MaterialsThe Institute of Technology
In the same journal
IOP Conference Series: Materials Science and Engineering
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 78 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf