Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC
2014 (English)In: IOP Conference Series: Materials Science and Engineering, ISSN 1757-8981, E-ISSN 1757-899X, Vol. 56, no 1, 012004- p.Article in journal (Refereed) Published
The thick N-B co-doped epilayers were grown by the fast sublimation growth method and the depth-resolved carrier lifetimes have been investigated by means of the free-carrier absorption (FCA) decay under perpendicular probe-pump measurement geometry. In some samples, we optically reveal in-grown carbon inclusions and polycrystalline defects of substantial concentration and show that these defects slow down excess carrier lifetime and prevent donor-acceptor pair photo luminescence (DAP PL). A pronounced electron lifetime reduction when injection level approaches the doping level was observed. It is caused by diffusion driven non-radiative recombination. However, the influence of surface recombination is small and insignificant at 300 K.
Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2014. Vol. 56, no 1, 012004- p.
IdentifiersURN: urn:nbn:se:liu:diva-105860DOI: 10.1088/1757-899X/56/1/012004OAI: oai:DiVA.org:liu-105860DiVA: diva2:711559
EMRS 2013 Spring Meeting, Symposium G