liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Properties of epitaxial graphene grown on C-face SiC compared to Si-face
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2014 (English)In: Journal of Materials Research, ISSN 0884-2914, E-ISSN 2044-5326, Vol. 29, no 3, 426-438 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial graphene of uniform thickness prepared on SiC is of great interest for various applications. On the Si-face, large area uniformity has been achieved, and there is a general consensus about the graphene properties. A similar uniformity has yet not been demonstrated on the C-face where the graphene has been claimed to be fundamentally different. A rotational disorder between adjacent graphene layers has been reported and suggested to explain why multilayer C-face graphene show the pi-band characteristic of monolayer graphene. Utilizing low energy electron microscopy, x-ray photoelectron electron microscopy, low energy electron diffraction, and photoelectron spectroscopy, we investigated the properties of C-face graphene prepared by sublimation growth. We observe the formation of micrometer-sized crystallographic grains of multilayer graphene and no rotational disorder between adjacent layers within a grain. Adjacent grains are in general found to have different azimuthal orientations. Effects on C-face graphene by hydrogen treatment and Na exposure were also investigated and are reported. Why multilayer C-face graphene exhibits single layer electronic properties is still a puzzle, however.

Place, publisher, year, edition, pages
Cambridge University Press (CUP) , 2014. Vol. 29, no 3, 426-438 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-105902DOI: 10.1557/jmr.2013.261ISI: 000331962700013OAI: oai:DiVA.org:liu-105902DiVA: diva2:712103
Available from: 2014-04-14 Created: 2014-04-12 Last updated: 2017-12-05

Open Access in DiVA

fulltext(837 kB)332 downloads
File information
File name FULLTEXT01.pdfFile size 837 kBChecksum SHA-512
bccecc2741851530f533e5175c6d9021af43c7f57115ebc74ec7b8b35233b55db6c9b6542f956f8875ee50ae04224133c247ed6c1c13908c96a2ad487ed2efbf
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records BETA

Johansson, Leif IVirojanadara, Chariya

Search in DiVA

By author/editor
Johansson, Leif IVirojanadara, Chariya
By organisation
Semiconductor MaterialsThe Institute of Technology
In the same journal
Journal of Materials Research
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
Total: 332 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 68 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf