Properties of epitaxial graphene grown on C-face SiC compared to Si-face
2014 (English)In: Journal of Materials Research, ISSN 0884-2914, Vol. 29, no 3, 426-438 p.Article in journal (Refereed) Published
Epitaxial graphene of uniform thickness prepared on SiC is of great interest for various applications. On the Si-face, large area uniformity has been achieved, and there is a general consensus about the graphene properties. A similar uniformity has yet not been demonstrated on the C-face where the graphene has been claimed to be fundamentally different. A rotational disorder between adjacent graphene layers has been reported and suggested to explain why multilayer C-face graphene show the pi-band characteristic of monolayer graphene. Utilizing low energy electron microscopy, x-ray photoelectron electron microscopy, low energy electron diffraction, and photoelectron spectroscopy, we investigated the properties of C-face graphene prepared by sublimation growth. We observe the formation of micrometer-sized crystallographic grains of multilayer graphene and no rotational disorder between adjacent layers within a grain. Adjacent grains are in general found to have different azimuthal orientations. Effects on C-face graphene by hydrogen treatment and Na exposure were also investigated and are reported. Why multilayer C-face graphene exhibits single layer electronic properties is still a puzzle, however.
Place, publisher, year, edition, pages
Cambridge University Press (CUP) , 2014. Vol. 29, no 3, 426-438 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-105902DOI: 10.1557/jmr.2013.261ISI: 000331962700013OAI: oai:DiVA.org:liu-105902DiVA: diva2:712103