liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Broadband Antireflection and Light Extraction Enhancement in Fluorescent SiC with Nanodome Structures
Technical University of Denmark.
Technical University of Denmark.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Show others and affiliations
2014 (English)In: Scientific Reports, ISSN 2045-2322, E-ISSN 2045-2322, Vol. 4, 4662- p.Article in journal (Refereed) Published
Abstract [en]

We demonstrate a time-efficient and low-cost approach to fabricate Si3N4 coated nanodome structures in fluorescent SiC. Nanosphere lithography is used as the nanopatterning method and SiC nanodome structures with Si3N4 coating are formed via dry etching and thin film deposition process. By using this method, a significant broadband surface antireflection and a considerable omnidirectional luminescence enhancement are obtained. The experimental observations are then supported by numerical simulations. It is believed that our fabrication method will be well suitable for large-scale production in the future.

Place, publisher, year, edition, pages
Nature Publishing Group, 2014. Vol. 4, 4662- p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-105988DOI: 10.1038/srep04662ISI: 000334102200015OAI: oai:DiVA.org:liu-105988DiVA: diva2:712613
Available from: 2014-04-15 Created: 2014-04-15 Last updated: 2017-12-05Bibliographically approved

Open Access in DiVA

fulltext(1707 kB)131 downloads
File information
File name FULLTEXT01.pdfFile size 1707 kBChecksum SHA-512
0e03050dba7d4807cb46130359e12cb3690d1b50423f7afda72d7239bbcf03859a77cb87d08cc0d86d6f077c4e5355787342bb096fb0efa4cddc373c16960cb2
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records BETA

Jokubavicius, ValdasYakimova, RositsaSyväjärvi, Mikael

Search in DiVA

By author/editor
Jokubavicius, ValdasYakimova, RositsaSyväjärvi, Mikael
By organisation
Semiconductor MaterialsThe Institute of Technology
In the same journal
Scientific Reports
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar
Total: 131 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 117 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf