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Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere
CNRS, L2C UMR 5221, F-34095, Montpellier, France.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Université Montpellier 2, L2C UMR 5221, F-34095, Montpellier, France .
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2014 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 778-780, 243-246 p.Article in journal (Refereed) Published
Abstract [en]

We investigated three 3C-SiC samples grown on 6H SiC substrate by sublimation epitaxy under gas atmosphere. We focus on the low temperature photoluminescence and Raman measurements to show that compare to a growth process under vacuum atmosphere, the gas atmosphere favor the incorporation of impurities at already existing and/or newly created defect sites.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2014. Vol. 778-780, 243-246 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-106083DOI: 10.4028/www.scientific.net/MSF.778-780.243ISI: 000348066300057OAI: oai:DiVA.org:liu-106083DiVA: diva2:713613
Available from: 2014-04-23 Created: 2014-04-23 Last updated: 2017-12-05Bibliographically approved

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Jokubavicius, ValdasSun, JianwuYakimova, RositsaSyväjärvi, Mikael

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