SiC based field effect transistor for H2S detection
(English)Manuscript (preprint) (Other academic)
Pt-gate and Ir-gate SiC-FETs were tested as H2S sensors. Both sensors showed good response towards H2S in dry conditions with oxygen present. Ir-gate sensors showed high sensitivity and low drift, which makes them a suitable candidate for leak detection applications. Further testing was performed with Ir-gate sensors for geothermal applications. This involved humid environments and low oxygen concentrations. The sensitivity of the sensors decreased significantly at these conditions. When propene was added to the gas mixture, crosssensitivity was observed in the sensor signal. Further investigation to reveal the surface chemistry using spectroscopic techniques and modelling is needed to improve the selectivity of Ir-gate sensors in humid conditions and oxygen deficient environments.
H2S sensors, SiC-FET, Pt, Ir, geothermal application
Other Physics Topics
IdentifiersURN: urn:nbn:se:liu:diva-106215OAI: oai:DiVA.org:liu-106215DiVA: diva2:714649