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Reactive DC magnetron sputtering of amorphous (Ti0.25B0.75)1−xSixNy thin films from TiB2 and Si targets
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
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2014 (English)Manuscript (preprint) (Other academic)
Abstract [en]

(Ti0.25B0.75)1−xSixNy, 0≤x≤0.89, 0.9≤y≤1.25, thin films were reactively grown on Si(001) substrates by dc magnetron sputtering from compound TiB2 and elemental Si targets. The films can be grown in a fully electron-diffraction amorphous state with x>0.46, as evidenced by XRD and HR-TEM investigations. With x=0, BN form onion-like sheets surrounding TiNnanograins. Substrate temperatures, Ts=100-600 ◦C, has a minor effect of the film structure and properties, due to limited surface diffusion.

Ion-assisted growth with substrate bias voltages, Vb, between -50 V and -200 V, favors densification of amorphous structures over nanocrystalline formation, and improves mechanical properties. A maximum hardness value of 26.8±0.7 GPa is found for an amorphous (Ti0.25B0.75)0.39Si0.61N1.15 film grown with substrate temperature Ts=400 °C and substrate bias voltage Vb=-100 V.

Place, publisher, year, edition, pages
2014.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-106572OAI: oai:DiVA.org:liu-106572DiVA: diva2:716722
Available from: 2014-05-12 Created: 2014-05-12 Last updated: 2016-08-31Bibliographically approved
In thesis
1. Growth and Characterization of Amorphous Multicomponent Nitride Thin Films
Open this publication in new window or tab >>Growth and Characterization of Amorphous Multicomponent Nitride Thin Films
2014 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis explores deposition of amorphous thin films based on the two transition metal nitride systems, TiN and HfN. Additions of Si, Al and B have been investigated using three different deposition techniques: dc magnetron sputtering, cathodic arc evaporation, and high power impulse magnetron sputtering (HIPIMS). The effect of elemental composition, bonding structure, growth temperature, and low-energy ion bombardment during growth has been investigated and correlated to the resulting microstructure and mechanical properties of the films. The thermal stability has been investigated by annealing experiments.

Deposition by cathodic arc evaporation yields dense and homogeneous coatings with essentially fully electron-diffraction amorphous structures with additions of either Al+Si, B+Si or B+Al+Si to TiN. The B-containing coatings have unusually few macroparticles. Annealing experiments show that Ti-Al-Si-N coatings have an age hardening behavior, which is not as clear for B-containing coatings. Compositional layering, due to rotation of the sample fixture during deposition, is present but not always visible in the as-deposited state. The layering acts as a template for renucleation during annealing. The coatings recrystallize by growth of TiN-rich  domains.

Amorphous growth by conventional dc magnetron sputtering is possible over a wide range of compositions for Ti-B-Si-N thin films. The Ti content in the films is reduced compared to the content in the sputtering target. Without Si, the films consist of a BN onion-like structure surrounding TiN nanograins. With additions of Si the films eventually grows fully amorphous. The growth temperature has only minor effect on the microstructure, due to the limited surface diffusion at the investigated temperature range (100-600 °C). Ion assisted growth leads to nanoscale densification of the films and improved mechanical properties.

Ti-B-Si-N thin films are also deposited by a hybrid technique where dc magnetron sputtering is combined with HIPIMS. Here, the Ti:B ratio remains equal to the target composition. Films with low Si content are porous with TiN nanograins separated by BN-rich amorphous channels and have low hardness. Increasing Si contents yield fully electron-amorphous films with higher hardness.

Finally, Hf-Al-Si-N single-layer and multilayer films are grown by dc magnetron sputtering from a single Hf-Al-Si target. Amorphous growth is achieved when the growth temperature was kept at its minimum. Low-energy substrate bias modulation is used to grow nanocomposite/nanocolumnar multilayers from the single Hf-Al-Si target, where the layers has essentially the same composition but different Si bonding structure, and different degree of crystallinity.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2014. 92 p.
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1595
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-106576 (URN)10.3384/diss.diva-106576 (DOI)978-91-7519-337-3 (ISBN)
Public defence
2014-05-28, Planck, Fysikhuset, Campus Valla, Linköping, 10:00 (English)
Opponent
Supervisors
Available from: 2014-05-12 Created: 2014-05-12 Last updated: 2016-08-31Bibliographically approved

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Fager, HannaEriksson, FredrikLu, JunJensen, JensHultman, Lars

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