liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Approaching Magnetic Ordering in Graphene Materials by FeCl3 Intercalation
University of Exeter, England .
University of Exeter, England .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
University of Exeter, England .
Show others and affiliations
2014 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 14, no 4, 1751-1755 p.Article in journal (Refereed) Published
Abstract [en]

We show the successful intercalation of large area (1 cm(2)) epitaxial few-layer graphene grown on 4H-SiC with FeCl3. Upon intercalation the resistivity of this system drops from an average value of similar to 200 Omega/sq to similar to 16 Omega/sq at room temperature. The magneto-conductance shows a weak localization feature with a temperature dependence typical of graphene Dirac fermions demonstrating the decoupling into parallel hole gases of each carbon layer composing the FeCl3 intercalated structure. The phase coherence length (similar to 1.2 mu m at 280 mK) decreases rapidly only for temperatures higher than the 2D magnetic ordering in the intercalant layer while it tends to saturate for temperatures lower than the antiferromagnetic ordering between the planes of FeCl3 molecules providing the first evidence for magnetic ordering in the extreme two-dimensional limit of graphene.

Place, publisher, year, edition, pages
American Chemical Society , 2014. Vol. 14, no 4, 1751-1755 p.
Keyword [en]
Intercalated graphene; graphene; epitaxial graphene; transparent conductor
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-106866DOI: 10.1021/nl4040779ISI: 000334572400010OAI: oai:DiVA.org:liu-106866DiVA: diva2:720094
Available from: 2014-05-28 Created: 2014-05-23 Last updated: 2017-12-05

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Yakimova, Rositsa

Search in DiVA

By author/editor
Yakimova, Rositsa
By organisation
Semiconductor MaterialsThe Institute of Technology
In the same journal
Nano letters (Print)
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 89 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf