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Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC
Kyoto University, Japan .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2014 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 115, no 14, 143705- p.Article in journal (Refereed) Published
Abstract [en]

In this study, to reveal the origin of the Z(1/2) center, a lifetime killer in n-type 4H-SiC, the concentrations of the Z(1/2) center and point defects are compared in the same samples, using deep level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). The Z(1/2) concentration in the samples is varied by irradiation with 250 keV electrons with various fluences. The concentration of a single carbon vacancy (V-C) measured by EPR under light illumination can well be explained with the Z(1/2) concentration derived from C-V and DLTS irrespective of the doping concentration and the electron fluence, indicating that the Z(1/2) center originates from a single V-C.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2014. Vol. 115, no 14, 143705- p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-106850DOI: 10.1063/1.4871076ISI: 000334680400031OAI: oai:DiVA.org:liu-106850DiVA: diva2:720122
Available from: 2014-05-28 Created: 2014-05-23 Last updated: 2017-12-05Bibliographically approved

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Trinh, Xuan ThangSon, Nguyen TienJanzén, Erik

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