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Low-Temperature Combustion-Synthesized Nickel Oxide Thin Films as Hole-Transport Interlayers for SolutionProcessed Optoelectronic Devices
Zhejiang University, Peoples R China .
Zhejiang University, Peoples R China .
Zhejiang University, Peoples R China Zhejiang University, Peoples R China Zhejiang University, Peoples R China .
Zhejiang University, Peoples R China .
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2014 (English)In: ADVANCED ENERGY MATERIALS, ISSN 1614-6832, Vol. 4, no 6Article in journal (Refereed) Published
Abstract [en]

A method to deposit NiOx thin films by employing combustion reactions is reported and a low processing temperature of 175 °C is demonstrated. The resulting NiOx films exhibit high work functions, excellent optical transparency, and flat surface features. The NiOx thin films are employed as hole-transport interlayers in organic solar cells and polymer light-emitting diodes, exhibiting superior electrical properties

Place, publisher, year, edition, pages
Wiley-VCH Verlag , 2014. Vol. 4, no 6
Keyword [en]
solution-processed materials; optoelectronics; hole transport layers; combustion; NiOx films
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-106974DOI: 10.1002/aenm.201301460ISI: 000334790000002OAI: oai:DiVA.org:liu-106974DiVA: diva2:721380
Available from: 2014-06-04 Created: 2014-06-02 Last updated: 2015-03-06

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Gao, FengZhang, Fengling

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