Limiting factor of defect-engineered spin-filtering effect at room temperature
2014 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 89, no 19, 195412- p.Article in journal (Refereed) Published
We identify hyperfine-induced electron and nuclear spin cross-relaxation as the dominant physical mechanism for the longitudinal electron spin relaxation time (T-1) of the spin-filtering Ga-i(2+) defects in GaNAs alloys. This conclusion is based on our experimental findings that T-1 is insensitive to temperature over 4-300 K, and its exact value is directly correlated with the hyperfine coupling strength of the defects that varies between different configurations of the Ga-i(2+) defects present in the alloys. These results thus provide a guideline for further improvements of the spin-filtering efficiency by optimizing growth and processing conditions to preferably incorporate the Ga-i(2+) defects with a weak hyperfine interaction and by searching for new spin-filtering defects with zero nuclear spin.
Place, publisher, year, edition, pages
American Physical Society , 2014. Vol. 89, no 19, 195412- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-107449DOI: 10.1103/PhysRevB.89.195412ISI: 000335913900007OAI: oai:DiVA.org:liu-107449DiVA: diva2:724324