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Raman Scattering and Carrier Diffusion Study in Heavily Co-doped 6H-SiC Layers
Vilnius University, Lithuania .
Vilnius University, Lithuania .
Vilnius University, Lithuania .
Vilnius University, Lithuania .
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2014 (English)In: IOP Conference Series: Materials Science and Engineering, ISSN 1757-8981, E-ISSN 1757-899X, Vol. 56, no 1, 012005- p.Article in journal (Refereed) Published
Abstract [en]

Thick 6H-SiC epilayers were grown using the fast sublimation method on low-off-axis substrates. They were co-doped with N and B impurities of ≈1019 cm−3 and (41016–51018) cm−3 concentration, respectively. The epilayers exhibited donor-acceptor pair (DAP) photoluminescence. The micro-Raman spectroscopic study exposed a compensated n-6H-SiC epilayer of common quality with some 3C-SiC inclusions. The compensation ratio of B through 200 μm thick epilayer varied in 20-30% range. The free carrier diffusivity was studied by transient grating technique at high injection level. The determined ambipolar diffusion coefficient at RT was found to decrease from 1.15 cm2/s to virtually 0 cm2/s with boron concentration increasing by two orders.

Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2014. Vol. 56, no 1, 012005- p.
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Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-107531DOI: 10.1088/1757-899X/56/1/012005OAI: oai:DiVA.org:liu-107531DiVA: diva2:725025
Conference
EMRS 2013 Spring Meeting, Symposium G
Available from: 2014-06-14 Created: 2014-06-14 Last updated: 2017-12-05Bibliographically approved

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Jokubavicius, ValdasSyväjärvi, Mikael

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