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Temperature Dependencies of Free-Carrier-Absorption Lifetime in Fluorescent 6H-SiC Layers
Institute of Applied Research, Vilnius University, Lithuania .
Institute of Applied Research, Vilnius University, Lithuania.
Institute of Applied Research, Vilnius University, Lithuania.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2014 (English)In: IOP Conference Series: Materials Science and Engineering, ISSN 1757-8981, E-ISSN 1757-899X, Vol. 56, no 1, 012006- p.Article in journal (Refereed) Published
Abstract [en]

The nonradiative decay of majority electrons has been studied over a wide temperature range from 80 K to 600 K using the time-resolved free-carrier-absorption (FCA) technique. At high injection level of the highly-luminescent N-B codoped 6H-SiC epilayer, we revealed three main relaxation components of injected free electrons over ps-to-ms time ranges. By means of temperature dependency, two components can be ascribed to thermal activation of holes from a shallow (200 meV) and a deep (500 meV) acceptor. The third one, which has a hundred us-time scale, we attribute to minority hole recombination from the valance band into the electron trap (53 meV). This recombination channel seems to compete with the deep-acceptor (Boron) to-donor (Nitrogen) pair visible emission at and below 300 K.

Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2014. Vol. 56, no 1, 012006- p.
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Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-107813DOI: 10.1088/1757-899X/56/1/012006OAI: oai:DiVA.org:liu-107813DiVA: diva2:727545
Conference
EMRS 2013 Spring Meeting, Symposium G
Available from: 2014-06-22 Created: 2014-06-22 Last updated: 2017-12-05Bibliographically approved

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Jokubavicius, ValdasSyväjärvi, Mikael

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