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Detecting Volatile Organic Compounds in the ppb range with platinum-gate SiC-Field Effect Transistors
Linköping University, Department of Physics, Chemistry and Biology, Applied Sensor Science. Linköping University, The Institute of Technology. Saarland University, Saarbruecken, Germany. (Dept. of Mechatronics Lab for Measurement Technology)
Linköping University, Department of Physics, Chemistry and Biology, Applied Sensor Science. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Applied Sensor Science. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2817-3574
Saarland University, Saarbruecken, Germany. (Dept. of Mechatronics Lab for Measurement Technology)
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2013 (English)In: SENSORS, 2013 IEEE, IEEE , 2013, 1-4 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this work, the use of a platinum gate gas-sensitive SiC Field Effect Transistor (SiC-FET) was studied for the detection of low concentrations of hazardous Volatile Organic Compounds (VOC). For this purpose, a new gas mixing system was built providing VOCs down to sub-ppb levels by permeation ovens and gas pre-dilution. Measurements have shown that benzene, naphthalene and formaldehyde can be detected in the ppb range and indicate a detection limit of 1-2 ppb for benzene and naphthalene. The sensitivity is high with a response of 5.5 mV for 10 ppb naphthalene in a humid atmosphere (at 20% relative humidity) and with additional 2 ppm ethanol the response to naphthalene was still 1.3 mV. Formaldehyde can be detected down to approximately 100 ppb under humid conditions. This is the first time that a metal gated SiC-FET was used to detect hazardous VOCs in the low ppb range making SiC-FETs suitable candidates for indoor air quality applications.

Place, publisher, year, edition, pages
IEEE , 2013. 1-4 p.
Series
IEEE Sensors. Proceedings, ISSN 1930-0395
National Category
Other Chemical Engineering Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-107940DOI: 10.1109/ICSENS.2013.6688279ISBN: 978-146734640-5 (print)OAI: oai:DiVA.org:liu-107940DiVA: diva2:728215
Conference
IEEE Sensors 2013, 3-6 November 2013, Baltimore, MD, USA
Available from: 2014-06-23 Created: 2014-06-23 Last updated: 2014-11-28Bibliographically approved

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Bur, ChristianAndersson, MikeLloyd Spetz, Anita

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