Silicon Carbide Detectors for in vivo Dosimetry
2014 (English)In: IEEE Transactions on Nuclear Science, ISSN 0018-9499, E-ISSN 1558-1578, Vol. 61, no 2, 961-966 p.Article in journal (Refereed) Published
Semiconductor detectors for in vivo dosimetry haveserved in recent years as an important part of quality assurancefor radiotherapy. Silicon carbide (SiC) can represent a bettersemiconductor with respect to the more popular silicon (Si) thanksto its physical characteristics such as wide bandgap, high electronsaturation velocity, lower effective atomic number, and high radiationresistance to X and gamma rays. In this article we present aninvestigation aimed at characterizing 4H-SiC epitaxial Schottkydiodes as in vivo dosimeters. The electrical characterization atroom temperature showed ultra low leakage current densities aslow as 0.1 pA/cm at 100 V bias with negligible dependence ontemperature. The SiC diode was tested as radiotherapy dosimeterusing 6 MV photon beams from a linear accelerator in a typicalclinical setting. Collected charge as a function of exposed radiationdose were measured and compared to three standard commerciallyavailable silicon dosimeters. A sensitivity of 23 nC/Gy withlinearity errors within 0.5% and time stability of 0.6% wereachieved. No negligible effects on the diode I-V characteristicsafter irradiation were observed.
Place, publisher, year, edition, pages
IEEE , 2014. Vol. 61, no 2, 961-966 p.
Dosimeters, dosimetry, semiconductor radiation detectors, silicon carbide, X-ray detectors
Other Engineering and Technologies Physical Sciences
IdentifiersURN: urn:nbn:se:liu:diva-107968DOI: 10.1109/TNS.2014.2307957OAI: oai:DiVA.org:liu-107968DiVA: diva2:728424