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Silicon Carbide Detectors for in vivo Dosimetry
Department of Electronics, Information and Bioengineering, Politecnico of Milano, Como, Italy.
Department of Electronics, Information and Bioengineering, Politecnico of Milano, Como, Italy.
Department of Electronics, Information and Bioengineering, Politecnico of Milano, Como, Italy.
Department of Medical Physics, IRCCS Fondazione Policlinico San Matteo, Pavia, Italy.
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2014 (English)In: IEEE Transactions on Nuclear Science, ISSN 0018-9499, E-ISSN 1558-1578, Vol. 61, no 2, 961-966 p.Article in journal (Refereed) Published
Abstract [en]

Semiconductor detectors for in vivo dosimetry haveserved in recent years as an important part of quality assurancefor radiotherapy. Silicon carbide (SiC) can represent a bettersemiconductor with respect to the more popular silicon (Si) thanksto its physical characteristics such as wide bandgap, high electronsaturation velocity, lower effective atomic number, and high radiationresistance to X and gamma rays. In this article we present aninvestigation aimed at characterizing 4H-SiC epitaxial Schottkydiodes as in vivo dosimeters. The electrical characterization atroom temperature showed ultra low leakage current densities aslow as 0.1 pA/cm at 100 V bias with negligible dependence ontemperature. The SiC diode was tested as radiotherapy dosimeterusing 6 MV photon beams from a linear accelerator in a typicalclinical setting. Collected charge as a function of exposed radiationdose were measured and compared to three standard commerciallyavailable silicon dosimeters. A sensitivity of 23 nC/Gy withlinearity errors within 0.5% and time stability of 0.6% wereachieved. No negligible effects on the diode I-V characteristicsafter irradiation were observed.

Place, publisher, year, edition, pages
IEEE , 2014. Vol. 61, no 2, 961-966 p.
Keyword [en]
Dosimeters, dosimetry, semiconductor radiation detectors, silicon carbide, X-ray detectors
National Category
Other Engineering and Technologies Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-107968DOI: 10.1109/TNS.2014.2307957OAI: oai:DiVA.org:liu-107968DiVA: diva2:728424
Available from: 2014-06-24 Created: 2014-06-24 Last updated: 2017-12-05Bibliographically approved

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Puglisi, Donatella

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