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Theoretical investigation of the single photon emitter carbon antisite-vacancy pair in 4H-SiC
Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Trans Tech Publications , 2014, Vol. 778-780, 495-498 p.Conference paper, Published paper (Refereed)
Abstract [en]

Well addressable and controllable point defects in device friendly semiconductors are desired for quantum computational and quantum informational processes. Recently, such defect, an ultra-bright single photon emitter, the carbon antisite - vacancy pair, was experimentally investigated in 4H-SiC. In our theoretical work, based on ab initio calculation and group theory analysis, we provide a deeper understanding of the features of the electronic structures and the luminescence process of this defect.

Place, publisher, year, edition, pages
Trans Tech Publications , 2014. Vol. 778-780, 495-498 p.
Series
Materials Science Forum, ISSN 1662-9752 ; 778-780
Keyword [en]
Point defect; single photon emitter; carbon antisite-vacancy pair
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-108199DOI: 10.4028/www.scientific.net/MSF.778-780.495ISI: 000336634100116OAI: oai:DiVA.org:liu-108199DiVA: diva2:729495
Conference
SILICON CARBIDE AND RELATED MATERIALS 2013
Available from: 2014-06-26 Created: 2014-06-26 Last updated: 2014-06-26

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Ivády, ViktorAbrikosov, IgorJanzén, ErikGali, Adam

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