Theoretical investigation of the single photon emitter carbon antisite-vacancy pair in 4H-SiC
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Trans Tech Publications , 2014, Vol. 778-780, 495-498 p.Conference paper (Refereed)
Well addressable and controllable point defects in device friendly semiconductors are desired for quantum computational and quantum informational processes. Recently, such defect, an ultra-bright single photon emitter, the carbon antisite - vacancy pair, was experimentally investigated in 4H-SiC. In our theoretical work, based on ab initio calculation and group theory analysis, we provide a deeper understanding of the features of the electronic structures and the luminescence process of this defect.
Place, publisher, year, edition, pages
Trans Tech Publications , 2014. Vol. 778-780, 495-498 p.
, Materials Science Forum, ISSN 1662-9752 ; 778-780
Point defect; single photon emitter; carbon antisite-vacancy pair
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-108199DOI: 10.4028/www.scientific.net/MSF.778-780.495ISI: 000336634100116OAI: oai:DiVA.org:liu-108199DiVA: diva2:729495
SILICON CARBIDE AND RELATED MATERIALS 2013