liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Show others and affiliations
2014 (English)In: Silicon Carbide and Related Materials 2013, PTS 1 AND 2, Trans Tech Publications Inc., 2014, Vol. 778-780, 471-474 p.Conference paper, Published paper (Refereed)
Abstract [en]

The optical properties of isotope-pure (SiC)-Si-28-C-12, natural SiC and enriched with C-13 isotope samples of the 4H polytype are studied by means of Raman and photoluminescence spectroscopies. The phonon energies of the Raman active phonons at the Gamma point and the phonons at the M point of the Brillouin zone are experimentally determined. The excitonic bandgaps of the samples are accurately derived using tunable laser excitation and the phonon energies obtained from the photoluminescence spectra. Qualitative comparison with previously reported results on isotope-controlled Si is presented.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2014. Vol. 778-780, 471-474 p.
Series
Materials Science Forum, ISSN 1662-9752 ; 778-780
Keyword [en]
isotope-pure SiC; isotope-enriched SiC; Raman spectroscopy; photoluminescence; bandgap variation with isotope content
National Category
Ceramics
Identifiers
URN: urn:nbn:se:liu:diva-108198DOI: 10.4028/www.scientific.net/MSF.778-780.471ISI: 000336634100110OAI: oai:DiVA.org:liu-108198DiVA: diva2:729497
Conference
15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), 29 September - 4 October 2013, Miyazaki, Japan
Available from: 2014-06-26 Created: 2014-06-26 Last updated: 2014-10-28Bibliographically approved

Open Access in DiVA

Fulltext(451 kB)469 downloads
File information
File name FULLTEXT01.pdfFile size 451 kBChecksum SHA-512
a5db67b58e2052cba20083b1023c3992cb6ef7f3b5b51f72fc07ec3ff52b84dccb7ae3835c7aee80a71b710c48ada00b785ee585b755e8564392d3998c754b8b
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records BETA

Ivanov, Ivan GueorguievYazdanfar, MilanLundqvist, BjörnChen, Jr-Taiul-Hassan, JawadStenberg, PontusLiljedahl, RickardSon, Nguyen TienKordina, OlleJanzén, Erik

Search in DiVA

By author/editor
Ivanov, Ivan GueorguievYazdanfar, MilanLundqvist, BjörnChen, Jr-Taiul-Hassan, JawadStenberg, PontusLiljedahl, RickardSon, Nguyen TienKordina, OlleJanzén, Erik
By organisation
Semiconductor MaterialsThe Institute of Technology
Ceramics

Search outside of DiVA

GoogleGoogle Scholar
Total: 469 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 611 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf