High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC
2014 (English)In: Silicon Carbide and Related Materials 2013, PTS 1 AND 2, Trans Tech Publications Inc., 2014, Vol. 778-780, 471-474 p.Conference paper (Refereed)
The optical properties of isotope-pure (SiC)-Si-28-C-12, natural SiC and enriched with C-13 isotope samples of the 4H polytype are studied by means of Raman and photoluminescence spectroscopies. The phonon energies of the Raman active phonons at the Gamma point and the phonons at the M point of the Brillouin zone are experimentally determined. The excitonic bandgaps of the samples are accurately derived using tunable laser excitation and the phonon energies obtained from the photoluminescence spectra. Qualitative comparison with previously reported results on isotope-controlled Si is presented.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2014. Vol. 778-780, 471-474 p.
, Materials Science Forum, ISSN 1662-9752 ; 778-780
isotope-pure SiC; isotope-enriched SiC; Raman spectroscopy; photoluminescence; bandgap variation with isotope content
IdentifiersURN: urn:nbn:se:liu:diva-108198DOI: 10.4028/www.scientific.net/MSF.778-780.471ISI: 000336634100110OAI: oai:DiVA.org:liu-108198DiVA: diva2:729497
15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), 29 September - 4 October 2013, Miyazaki, Japan