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Identification of the negative carbon vacancy at quasi-cubic site in 4H-SiC by EPR and theoretical calculations
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, Hungary.
Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, Hungary.
Institute of Physics, Loránd Eötvös University, Hungary.
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2014 (English)In: Silicon Carbide and Related Materials 2013, PTS 1 AND 2, Trans Tech Publications Inc., 2014, Vol. 778-780, 285-288 p.Conference paper, Published paper (Refereed)
Abstract [en]

In freestanding n-type 4H-SiC epilayers irradiated with low-energy (250 keV) electrons at room temperature, the electron paramagnetic resonance (EPR) spectrum of the negative carbon vacancy at the hexagonal site, V-C(-)(h), and a new signal were observed. From the similarity in defect formation and the spin-Hamiltonian parameters of the two defects, the new center is suggested to be the negative C vacancy at the quasi-cubic site, V-C(-)(k). The identification is further supported by hyperfine calculations.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2014. Vol. 778-780, 285-288 p.
Series
Materials Science Forum, ISSN 1662-9752 ; 778-780
Keyword [en]
Carbon vacancy; negative-U behavior; electron irradiation; EPR; supercell calculations
National Category
Ceramics
Identifiers
URN: urn:nbn:se:liu:diva-108197DOI: 10.4028/www.scientific.net/MSF.778-780.285ISI: 000336634100067OAI: oai:DiVA.org:liu-108197DiVA: diva2:729498
Conference
15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), 29 September - 4 October 2013, Miyazaki, Japan
Available from: 2014-06-26 Created: 2014-06-26 Last updated: 2014-10-28Bibliographically approved

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Trinh, Xuan ThangGali, ÁdamJanzén, ErikSon, Nguyen Tien

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