Identification of the negative carbon vacancy at quasi-cubic site in 4H-SiC by EPR and theoretical calculations
2014 (English)In: Silicon Carbide and Related Materials 2013, PTS 1 AND 2, Trans Tech Publications Inc., 2014, Vol. 778-780, 285-288 p.Conference paper (Refereed)
In freestanding n-type 4H-SiC epilayers irradiated with low-energy (250 keV) electrons at room temperature, the electron paramagnetic resonance (EPR) spectrum of the negative carbon vacancy at the hexagonal site, V-C(-)(h), and a new signal were observed. From the similarity in defect formation and the spin-Hamiltonian parameters of the two defects, the new center is suggested to be the negative C vacancy at the quasi-cubic site, V-C(-)(k). The identification is further supported by hyperfine calculations.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2014. Vol. 778-780, 285-288 p.
, Materials Science Forum, ISSN 1662-9752 ; 778-780
Carbon vacancy; negative-U behavior; electron irradiation; EPR; supercell calculations
IdentifiersURN: urn:nbn:se:liu:diva-108197DOI: 10.4028/www.scientific.net/MSF.778-780.285ISI: 000336634100067OAI: oai:DiVA.org:liu-108197DiVA: diva2:729498
15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), 29 September - 4 October 2013, Miyazaki, Japan