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Oxidation induced ON1, ON2a/b defects in 4H-SiC characterized by DLTS
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Complex Materials and Devices. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Trans Tech Publications , 2014, Vol. 778-780, 281-284 p.Conference paper, Published paper (Refereed)
Abstract [en]

The deep levels ON1 and ON2a/b introduced by oxidation into 4H-SiC are characterized via standard DLTS and via filling pulse dependent DLTS measurements. Separation of the closely spaced ON2a/b defect is achieved by using a higher resolution correlation function (Gaver-Stehfest 4) and apparent energy level, apparent electron capture cross section and filling pulse measurement derived capture cross sections are given.

Place, publisher, year, edition, pages
Trans Tech Publications , 2014. Vol. 778-780, 281-284 p.
Series
Materials Science Forum, ISSN 1662-9752 ; 778-780
Keyword [en]
4H-SiC; DLTS; oxidation; carrier lifetime; defect; deep level; trap; capture cross section
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-108196DOI: 10.4028/www.scientific.net/MSF.778-780.281ISI: 000336634100066OAI: oai:DiVA.org:liu-108196DiVA: diva2:729500
Conference
SILICON CARBIDE AND RELATED MATERIALS 2013
Available from: 2014-06-26 Created: 2014-06-26 Last updated: 2015-04-01

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Booker, Ian DonAbdalla, Hassanul-Hassan, JawadBergman, PederSveinbjörnsson, EinarJanzén, Erik

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Booker, Ian DonAbdalla, Hassanul-Hassan, JawadBergman, PederSveinbjörnsson, EinarJanzén, Erik
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Semiconductor MaterialsThe Institute of TechnologyComplex Materials and Devices
Engineering and Technology

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