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Improved Epilayer Surface Morphology on 2 degrees off-cut 4H-SiC Substrates
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Trans Tech Publications , 2014, Vol. 778-780, 206-209 p.Conference paper, Published paper (Refereed)
Abstract [en]

Homoepitaxial layers of 4H-SiC were grown with horizontal hot-wall CVD on 2 degrees off-cut substrates, with the purpose of improving the surface morphology of the epilayers and reducing the density of surface morphological defects. In-situ etching conditions in either pure hydrogen or in a mixture of silane and hydrogen prior to the growth were compared as well as C/Si ratios in the range 0.8 to 1.0 during growth. The smoothest epilayer surface, together with lowest defect density, was achieved with growth at a C/Si ratio of 0.9 after an in-situ etching in pure hydrogen atmosphere.

Place, publisher, year, edition, pages
Trans Tech Publications , 2014. Vol. 778-780, 206-209 p.
Series
Materials Science Forum, ISSN 1662-9752 ; 778-780
Keyword [en]
epitaxial growth; horizontal hot-wall CVD; atomic force microscopy; vicinal off angle
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-108194DOI: 10.4028/www.scientific.net/MSF.778-780.206ISI: 000336634100048OAI: oai:DiVA.org:liu-108194DiVA: diva2:729504
Conference
SILICON CARBIDE AND RELATED MATERIALS 2013
Available from: 2014-06-26 Created: 2014-06-26 Last updated: 2014-06-26

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ul-Hassan, JawadJanzén, ErikBergman, Peder

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