Improved Epilayer Surface Morphology on 2 degrees off-cut 4H-SiC Substrates
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Trans Tech Publications , 2014, Vol. 778-780, 206-209 p.Conference paper (Refereed)
Homoepitaxial layers of 4H-SiC were grown with horizontal hot-wall CVD on 2 degrees off-cut substrates, with the purpose of improving the surface morphology of the epilayers and reducing the density of surface morphological defects. In-situ etching conditions in either pure hydrogen or in a mixture of silane and hydrogen prior to the growth were compared as well as C/Si ratios in the range 0.8 to 1.0 during growth. The smoothest epilayer surface, together with lowest defect density, was achieved with growth at a C/Si ratio of 0.9 after an in-situ etching in pure hydrogen atmosphere.
Place, publisher, year, edition, pages
Trans Tech Publications , 2014. Vol. 778-780, 206-209 p.
, Materials Science Forum, ISSN 1662-9752 ; 778-780
epitaxial growth; horizontal hot-wall CVD; atomic force microscopy; vicinal off angle
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-108194DOI: 10.4028/www.scientific.net/MSF.778-780.206ISI: 000336634100048OAI: oai:DiVA.org:liu-108194DiVA: diva2:729504
SILICON CARBIDE AND RELATED MATERIALS 2013